Transparent Flexible Nanoline Field-Effect Transistor Array with High Integration in a Large Area.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 31895536.
- Also identified by DOI 10.1021/acsnano.9b08199.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Transparent flexible transistor array requests large-area fabrication, high integration, high manufacturing throughput, inexpensive process, uniformity in transistor performance, and reproducibility. This study suggests a facile and reliable approach to meet the requirements. We use the Al-coated polymer nanofiber patterns obtained by electrohydrodynamic (EHD) printing as a photomask. We use the lithography and deposition to produce highly aligned nanolines (NLs) of metals, insulators, and semiconductors on large substrates. With these NLs, we demonstrate a highly integrated NL field-effect transistor (NL-FET) array (10<sup>5</sup>/(4 × 4 in<sup>2</sup>), 254 pixel-per-inch) made of pentacene and indium zinc oxide semiconductor NLs. In addition, we demonstrate a NL complementary inverter (NL-CI) circuit consisting of pentacene and fullerene NLs. The NL-FET array shows high transparency (∼90%), flexibility (stable at 2.5 mm bending radius), uniformity (∼90%), and high performances (mobility = 0.52 cm<sup>2</sup>/(V s), on-off ratio = 7.0 × 10<sup>6</sup>). The NL-CI circuit also shows high transparency, flexibility, and typical switching characteristic with a gain of 21. The reliable large-scale fabrication of the various NLs proposed in this study is expected to be applied for manufacturing transparent flexible nanoelectronic devices.