A Flexible Carbon Nanotube Sen-Memory Device.

Qu, Ting-Yu; Sun, Yun; Chen, Mao-Lin; Liu, Zhi-Bo; Zhu, Qian-Bing; Wang, Bing-Wei; Zhao, Tian-Yang; Liu, Chi et al. · Adv Mater · 2020

basic_science · Level V

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Abstract

In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of ≈10<sup>6</sup> , a long-term retention of ≈10<sup>8</sup> s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.