Modulation of Junction Modes in SnSe<sub>2</sub>/MoTe<sub>2</sub> Broken-Gap van der Waals Heterostructure for Multifunctional Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 32031411.
- Also identified by DOI 10.1021/acs.nanolett.9b04926.
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Abstract
We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe<sub>2</sub> and MoTe<sub>2</sub> with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 10<sup>12</sup> Jones. In addition, to harness the electrostatic gate bias, <i>V</i><sub>oc</sub> can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe<sub>2</sub>/MoTe<sub>2</sub> heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.