Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO<sub>3</sub>-KTaO<sub>3</sub> with strong spin-orbit coupling.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32054860.
- Also identified by DOI 10.1038/s41467-020-14689-z and PMC identifier 7018836.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Among the perovskite oxide family, KTaO<sub>3</sub> (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we report a novel conducting interface by placing KTO with another insulator, LaVO<sub>3</sub> (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observations of two fold AMR and PHE at low magnetic fields (B) is similar to those obtained for topological systems and can be intuitively understood using a phenomenological theory for a Rashba spin-split system. Our experimental data show a B<sup>2</sup> dependence of AMR and PHE at low magnetic fields that could also be explained based on our model. At high fields (~8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra.