Spin-Valley Locking Effect in Defect States of Monolayer MoS<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 32078769.
- Also identified by DOI 10.1021/acs.nanolett.0c00138.
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Abstract
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS<sub>2</sub>; enhanced valley Zeeman splitting with an effective <i>g</i>-factor of -6.2 is observed. Our results reveal that all five <i>d</i>-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.