Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small V_oc Deficit of 0.33 V.

Abstract

1.5-1.6 eV bandgap Pb-based perovskite solar cells (PSCs) with 30-31% theoretical efficiency limit by the Shockley-Queisser model achieve 21-24% power conversion efficiencies (PCEs). However, the best PCEs of reported ideal-bandgap (1.3-1.4 eV) Sn-Pb PSCs with a higher 33% theoretical efficiency limit are <18%, mainly because of their large open-circuit voltage (V_oc ) deficits (>0.4 V). Herein, it is found that the addition of guanidinium bromide (GABr) can significantly improve the structural and photoelectric characteristics of ideal-bandgap (≈1.34 eV) Sn-Pb perovskite films. GABr introduced in the perovskite films can efficiently reduce the high defect density caused by Sn²⁺ oxidation in the perovskite, which is favorable for facilitating hole transport, decreasing charge-carrier recombination, and reducing the V_oc deficit. Therefore, the best PCE of 20.63% with a certificated efficiency of 19.8% is achieved in 1.35 eV PSCs, along with a record small V_oc deficit of 0.33 V, which is the highest PCE among all values reported to date for ideal-bandgap Sn-Pb PSCs. Moreover, the GABr-modified PSCs exhibit significantly improved environmental and thermal stability. This work represents a noteworthy step toward the fabrication of efficient and stable ideal-bandgap PSCs.