A FinFET with one atomic layer channel.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32139679.
- Also identified by DOI 10.1038/s41467-020-15096-0 and PMC identifier 7058032.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W[Formula: see text]) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W[Formula: see text] seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching [Formula: see text]. Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.