Sub-nanosecond memristor based on ferroelectric tunnel junction.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32188861.
- Also identified by DOI 10.1038/s41467-020-15249-1 and PMC identifier 7080735.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO<sub>3</sub>/Nb:SrTiO<sub>3</sub> ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 10<sup>3</sup> A cm<sup>-2</sup>. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO<sub>3</sub> electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems.