Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 32233493.
- Also identified by DOI 10.1021/acs.nanolett.0c00258.
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Abstract
The wavelength-tunable interlayer exciton (IE) from layered semiconductor materials has not been achieved. van der Waals heterobilayers constructed using single-layer transition metal dichalcogenides can produce continuously changed interlayer band gaps, which is a feasible approach to achieve tunable IEs. In this work, we design a series of van der Waals heterostructures composed of a WSe<sub>2</sub> layer with a fixed band gap and another WS<sub>2(1-<i>x</i>)</sub>Se<sub>2<i>x</i></sub> alloy layer with continuously changed band gaps. The existence of IEs and tunable interlayer band gaps in these heterobilayers is verified by steady-state photoluminescence experiments. By tuning the composition of the WS<sub>2(1-<i>x</i>)</sub>Se<sub>2<i>x</i></sub> alloy layers, we realized a very wide tunable band gap range of 1.97-1.40 eV with a wavelength-tunable IE emission range of 1.52-1.40 eV from the heterobilayers. The time-resolved photoluminescence experiments show the IE emission lifetimes over nanoseconds.