High efficiency and stability of ink-jet printed quantum dot light emitting diodes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32242016.
- Also identified by DOI 10.1038/s41467-020-15481-9 and PMC identifier 7118149.
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Abstract
The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.