Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal.
basic_science · Level V
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- Record sourced from PubMed, PMID 32298083.
- Also identified by DOI 10.1021/acsnano.0c02325.
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Abstract
We report the successful fabrication of noncollinear antiferromagnetic <i>D</i>0<sub>19</sub> Mn<sub>3</sub>Ge thin films on insulating oxide substrates. The anomalous Hall effect and the large parallel negative magnetoresistance that is robust up to 53 T are observed in the thin films, which may provide evidence for the recent theoretical prediction of the existence of Weyl fermions in antiferromagnetic Mn<sub>3</sub>Ge. More importantly, we integrate the Mn<sub>3</sub>Ge thin films onto ferroelectric PMN-PT substrates and manipulate the longitudinal resistance reversibly by electric fields at room temperature, demonstrating the anisotropic magnetoresistance effect in noncollinear antiferromagnets, which thus illustrates the potential of antiferromagnetic Mn<sub>3</sub>Ge for information storage applications.