Percolation-Limited Dual Charge Transport in Vertical p<i>-</i>n Heterojunction Schottky Barrier Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 32343583.
- Also identified by DOI 10.1021/acs.nanolett.0c00523.
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Abstract
Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC<sub>71</sub>BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene-PBDB-T and graphene-PC<sub>71</sub>BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on-off switching characteristics, providing a high on-off current ratio exceeding 10<sup>5</sup> and an operation speed of 100 kHz. Solution-based on-substrate fabrications of low-power complementary logic gates such as NOT, NOR, and NAND are also successfully performed.