Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO<sub>3</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 32346899.
- Also identified by DOI 10.1002/adma.202000508.
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Abstract
Results of switching behavior of the improper ferroelectric LuFeO<sub>3</sub> are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO<sub>3</sub> . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.