High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure.
basic_science · Level V
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- Record sourced from PubMed, PMID 32407078.
- Also identified by DOI 10.1021/acsnano.0c01815.
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Abstract
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe<sub>2</sub> thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large <i>R</i><sub>AHE</sub> is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO<sub>2</sub> and amorphous YIG layers is actually observed between ZrTe<sub>2</sub> and YIG. The magnetization of interfacial reaction-induced ZrO<sub>2</sub> and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe<sub>2</sub>. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.