Colossal flexoresistance in dielectrics.

Park, Sung Min; Wang, Bo; Paudel, Tula; Park, Se Young; Das, Saikat; Kim, Jeong Rae; Ko, Eun Kyo; Lee, Han Gyeol et al. · Nat Commun · 2020

basic_science · Level V

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Abstract

Dielectrics have long been considered as unsuitable for pure electrical switches; under weak electric fields, they show extremely low conductivity, whereas under strong fields, they suffer from irreversible damage. Here, we show that flexoelectricity enables damage-free exposure of dielectrics to strong electric fields, leading to reversible switching between electrical states-insulating and conducting. Applying strain gradients with an atomic force microscope tip polarizes an ultrathin film of an archetypal dielectric SrTiO<sub>3</sub> via flexoelectricity, which in turn generates non-destructive, strong electrostatic fields. When the applied strain gradient exceeds a certain value, SrTiO<sub>3</sub> suddenly becomes highly conductive, yielding at least around a 10<sup>8</sup>-fold decrease in room-temperature resistivity. We explain this phenomenon, which we call the colossal flexoresistance, based on the abrupt increase in the tunneling conductance of ultrathin SrTiO<sub>3</sub> under strain gradients. Our work extends the scope of electrical control in solids, and inspires further exploration of dielectric responses to strong electromechanical fields.