Realization of ∼10 nm Features on Semiconductor Surfaces via Femtosecond Laser Direct Patterning in Far Field and in Ambient Air.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32511934.
- Also identified by DOI 10.1021/acs.nanolett.0c01013.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Direct fabrication of ∼10 nm features by optical means in far field and in ambient air on semiconductor surfaces is significant for next-generation advances nanomanufacturing. We report here a new method that enables the direct formation of 12 nm (λ/66) features on silicon surfaces. It is processed in far field and in ambient air via the irradiation of orthogonally polarized double femtosecond laser beams. The coupling of orthogonally polarized double femtosecond laser beams and the incubation effect due to multiple femtosecond laser pulses irradiation under high repetition rate enable the 12 nm nanostructures creation parallel to the scanning direction, regardless of scanning path.