A foundation for complex oxide electronics -low temperature perovskite epitaxy.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32513928.
- Also identified by DOI 10.1038/s41467-020-16654-2 and PMC identifier 7280286.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabricate devices with enhanced and exotic functionality. One of the challenges for integration of complex oxides in electronics is the availability of appreciable low-temperature synthesis routes. Herein we provide a fundamental extension of the materials toolbox for oxide electronics by reporting a facile route for deposition of highly electrically conductive thin films of LaNiO<sub>3</sub> by atomic layer deposition at low temperatures. The films grow epitaxial on SrTiO<sub>3</sub> and LaAlO<sub>3</sub> as deposited at 225 °C, with no annealing required to obtain the attractive electronic properties. The films exhibit resistivity below 100 µΩ cm with carrier densities as high as 3.6 · 10<sup>22</sup> cm<sup>-3</sup>. This marks an important step in the realization of all-oxide electronics for emerging technological devices.