Ultrasensitive Phototransistor Based on WSe<sub>2</sub>-MoS<sub>2</sub> van der Waals Heterojunction.
basic_science · Level V
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- Record sourced from PubMed, PMID 32589036.
- Also identified by DOI 10.1021/acs.nanolett.0c01460.
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Abstract
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe<sub>2</sub> and MoS<sub>2</sub> was developed. The MoS<sub>2</sub> was utilized as the channel for a phototransistor, whereas the WSe<sub>2</sub>-MoS<sub>2</sub> PN junction in the out-of-plane orientation was utilized as a charge transfer layer. The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 10<sup>6</sup>. The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 × 10<sup>11</sup> Jones, and response time of 17 ms. The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications.