Topologically Nontrivial Phase-Change Compound GeSb<sub>2</sub>Te<sub>4</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 32628444.
- Also identified by DOI 10.1021/acsnano.0c04145.
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Abstract
Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb<sub>2</sub>Te<sub>4</sub> is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb<sub>2</sub>Te<sub>4</sub> can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.