High-heat-flux rectification due to a localized thermal diode.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32688508.
- Also identified by DOI 10.1103/PhysRevE.101.062122.
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Abstract
A theoretical implementation of a localized thermal diode with a rectification factor greater than 10^{6} is demonstrated. In reverse thermal bias, extremely low thermal conductivity is achieved through phononic Rayleigh scattering from a finite-depth defect. In forward bias, the diode oscillator escapes the defect and thermal conductivity becomes up to four orders of magnitude higher. The setup provides a minimal model of a localized thermal diode between two identical oscillator chains and opens up a pathway for thermal diode implementations.