Photoconductivity Multiplication in Semiconducting Few-Layer MoTe<sub>2</sub>.

Zheng, Wenhao; Bonn, Mischa; Wang, Hai I · Nano Lett · 2020

basic_science · Level V

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Abstract

We report efficient photoconductivity multiplication in few-layer 2H-MoTe<sub>2</sub> as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (∼45 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) in MoTe<sub>2</sub>. This photoconductivity multiplication is quantified using ultrafast, excitation-wavelength-dependent photoconductivity measurements employing contact-free terahertz spectroscopy. We discuss the possible origins of efficient carrier multiplication in MoTe<sub>2</sub> to guide future theoretical investigations. The combination of photoconductivity multiplication and the advantageous bandgap renders MoTe<sub>2</sub> as a promising candidate for efficient optoelectronic devices.