Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS<sub>2</sub> Monolayer.
basic_science · Level V
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- Record sourced from PubMed, PMID 32786947.
- Also identified by DOI 10.1021/acs.nanolett.0c01955 and PMC identifier 7496736.
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Abstract
A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS<sub>2</sub> interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS<sub>2</sub>(0.88)/Py(7), and the spin Hall conductivity <math xmlns="http://www.w3.org/1998/Math/MathML"><mo>(</mo><mn>14.9</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mn>5</mn></mrow></msup><mfrac><mrow><mi>ℏ</mi></mrow><mrow><mn>2</mn><mi>e</mi></mrow></mfrac><msup><mrow><mo>Ω</mo></mrow><mrow><mo>-</mo><mn>1</mn></mrow></msup><msup><mrow><mi>m</mi></mrow><mrow><mo>-</mo><mn>1</mn></mrow></msup><mo>)</mo></math> is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS<sub>2</sub>/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin-orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.