Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub>.

Hou, Fuchen; Yao, Qiushi; Zhou, Chun-Sheng; Ma, Xiao-Ming; Han, Mengjiao; Hao, Yu-Jie; Wu, Xuefeng; Zhang, Yu et al. · ACS Nano · 2020

basic_science · Level V

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Abstract

MnBi<sub>2</sub>Te<sub>4</sub> is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi<sub>2</sub>Te<sub>4</sub>, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi<sub>2</sub>Te<sub>4</sub> exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi<sub>2</sub>Te<sub>3</sub> quintuple layer and a Mn<sub><i>x</i></sub>Bi<sub><i>y</i></sub>Te double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by <i>in situ</i> annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi<sub>2</sub>Te<sub>4</sub> and provide an insightful perspective on the surface-related quantum measurements in MnBi<sub>2</sub>Te<sub>4</sub> few-layer devices.