Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating.
basic_science · Level V
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- Record sourced from PubMed, PMID 32833445.
- Also identified by DOI 10.1021/acsnano.0c03978.
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Abstract
In this work, we demonstrate high-performance indium-tin-oxide (ITO) transistors with a channel thickness down to 1 nm and ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> as gate dielectric. An on-current of 0.243 A/mm is achieved on submicron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ω·mm and a low contact resistivity of 1.1 × 10<sup>-7</sup> Ω·cm<sup>2</sup>. The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin-film transistors, including large-area wafer-size nanometer thin-film formation, low contact resistance and contact resistivity, an atomic thin channel being immune to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line complementary metal-oxide-semiconductor application.