Wafer-Scale Highly Oriented Monolayer MoS<sub>2</sub> with Large Domain Sizes.
basic_science · Level V
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- Record sourced from PubMed, PMID 32833463.
- Also identified by DOI 10.1021/acs.nanolett.0c02531.
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Abstract
Two-dimensional molybdenum disulfide (MoS<sub>2</sub>) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS<sub>2</sub> wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS<sub>2</sub> wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS<sub>2</sub>.