Dielectric Nanowire Hybrids for Plasmon-Enhanced Light-Matter Interaction in 2D Semiconductors.

Abstract

Monolayer transition metal dichalcogenides (TMDs) with a direct band gap are suitable for various optoelectronic applications such as ultrathin light emitters and absorbers. However, their weak light absorption caused by the atomically thin layer hinders more versatile applications for high optical gains. Although plasmonic hybridization with metal nanostructures significantly enhances light-matter interactions, the corrosion, instability of the metal nanostructures, and the undesired effects of direct metal-semiconductor contact act as obstacles to its practical application. Herein, we propose a dielectric nanostructure for plasmon-enhanced light-matter interaction of TMDs. TiO₂ nanowires (NWs), as an example, are hybridized with a MoS₂ monolayer on various substrates. The structure is implemented by placing a monolayer MoS₂ between a TiO₂ NW for a photonic scattering effect and metallic substrates with a spacer for the plasmonic Purcell effect. Here, the thin dielectric spacer is aimed at minimizing emission quenching from direct metal contact, while maximizing optical field localization in ultrathin MoS₂ near the TiO₂ NW. An effective emission enhancement factor of ∼22 is attained for MoS₂ near the NW of the hybrid structure compared to the one without NWs. Our work is expected to facilitate a hybridized platform based on 2D semiconductors for high-performance and robust optoelectronics <i>via</i> engineering dielectric nanostructures with plasmonic materials.