High-performance p-channel transistors with transparent Zn doped-CuI.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32855400.
- Also identified by DOI 10.1038/s41467-020-18006-6 and PMC identifier 7453006.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
'Ideal' transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and high on/off current ratio of ~10<sup>7</sup> with good operational stability and reproducibility. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n-type metal-oxide semiconductor.