Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors.

Abstract

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (ε_r ∼ 22) amorphous native oxide Bi₂SeO_<i>x</i> on the high-mobility 2D semiconducting Bi₂O₂Se using O₂ plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ∼0.9 nm, while the original properties of underlying 2D Bi₂O₂Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi₂O₂Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.