Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> Stacking Heterostructure.
basic_science · Level V
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- Record sourced from PubMed, PMID 32885948.
- Also identified by DOI 10.1021/acsnano.0c05252.
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Abstract
The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> when the temperature is below the Neel temperature of MnPS<sub>3</sub>. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe<sub>3</sub>GeTe<sub>2</sub> during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.