Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves.
basic_science · Level V
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- Record sourced from PubMed, PMID 32970444.
- Also identified by DOI 10.1021/acs.nanolett.0c02950.
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Abstract
Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the construction of versatile 3D nanocomplexes, while the major challenge is to achieve a precise location and uniformity control, as guaranteed by top-down lithography. Here, an unprecedented uniform and reliable growth integration of 10-layer stacked Si nanowires (SiNWs) has been accomplished, for the very first time, via a new groove-confined and tailored catalyst formation and guided growth upon the truncated sidewall of SiO<sub>2</sub>/SiN<sub><i>x</i></sub> multilayers. The SiNW array accomplishes a narrow diameter of <i>D</i><sub>nw</sub> = 28 ± 2.4 nm, NW-to-NW spacing of <i>t</i><sub>sp</sub> = 40 nm, and extremely stable growth over <i>L</i><sub>nw</sub> > 50 μm and bending locations, which can compete with or even outperform the <i>state-of-the-art</i> top-down lithography and etching approaches, in terms of stacking number, channel uniformity at different levels, fabrication cost, and efficiency. These results provide a solid basis to establish a new 3D integration approach to batch-manufacture various advanced electronic and sensor applications.