Constructing phase boundary in AgNbO<sub>3</sub> antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 32973146.
- Also identified by DOI 10.1038/s41467-020-18665-5 and PMC identifier 7515927.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Dielectric capacitors with high energy storage density (W<sub>rec</sub>) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high W<sub>rec</sub> of 6.3 J cm<sup>-3</sup> with η of 90% can be simultaneously achieved by constructing a room temperature M2-M3 phase boundary in (1-x)AgNbO<sub>3</sub>-xAgTaO<sub>3</sub> solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20-150 °C and excellent cycling reliability up to 10<sup>6</sup> cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelectric features relevant to the local structure heterogeneity and antiferroelectric ordering, being confirmed by scanning transmission electron microscopy and synchrotron X-ray diffraction. This work provides a good paradigm for developing new lead-free dielectrics for high-power energy storage applications.