Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33139740.
- Also identified by DOI 10.1038/s41467-020-19237-3 and PMC identifier 7608657.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI<sub>3</sub>) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI<sub>3</sub> from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI<sub>3</sub> showed efficiencies and stabilities superior to those of devices fabricated without NHE.