Microwave AC Resonance Induced Phase Change in Sb<sub>2</sub>Te<sub>3</sub> Nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 33205986.
- Also identified by DOI 10.1021/acs.nanolett.0c03421.
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Abstract
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity, and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at ∼3 GHz in single Sb<sub>2</sub>Te<sub>3</sub> nanowires. The resistance change by a total of 6-7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multistate information bit encoding and electrical addressability along a single nanowire, rendering technology advancement for neuro-inspired computing devices.