Precise Tuning of Band Structures and Electron Correlations by van der Waals Stacking of One-dimensional W<sub>6</sub>Te<sub>6</sub> Wires.

Deng, Jinghao; Huo, Da; Bai, Yusong; Guo, Yanping; Pan, Zemin; Lu, Shuangzan; Cui, Ping; Zhang, Zhenyu et al. · Nano Lett · 2020

basic_science · Level V

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Abstract

Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W<sub>6</sub>Te<sub>6</sub> wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W<sub>6</sub>Te<sub>6</sub> wire is a 1D semiconductor with a band gap of ∼60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga-Luttinger liquid characteristics with the correlation parameter <i>g</i> varying from <i>g</i> = 0.086 for biwire to <i>g</i> = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (<i>g</i> = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.