Realization of an Antiferromagnetic Superatomic Graphene: Dirac Mott Insulator and Circular Dichroism Hall Effect.
basic_science · Level V
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- Record sourced from PubMed, PMID 33263394.
- Also identified by DOI 10.1021/acs.nanolett.0c03579.
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Abstract
Using first-principles calculations, we investigate the electronic and topological properties of an antiferromagnetic (AFM) superatomic graphene lattice superimposed on a bipartite honeycomb lattice governed by Lieb's theorem of itinerant magnetism. It affords a concrete material realization of the AFM honeycomb model with a Dirac Mott insulating state, characterized by a gap opening at the Dirac point due to inversion symmetry breaking by long-range AFM order. The opposite Berry curvatures of the <i>K</i> and <i>K</i>' valleys induces a circular dichroism (CD) Hall effect. Different from the valley Hall effect that activates only one valley, the CD Hall effect activates carriers from both <i>K</i> and <i>K</i>' valleys, generating the opposite directions of transversal Hall currents for the left- and right-handed circularly polarized light, respectively.