Van der Waals Multiferroic Tunnel Junctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 33264014.
- Also identified by DOI 10.1021/acs.nanolett.0c03452.
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Abstract
Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for nonvolatile memory devices. So far, however, all of the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic Fe<i><sub>n</sub></i>GeTe<sub>2</sub> (<i>n</i> = 3, 4, 5) electrodes and 2D ferroelectric In<sub>2</sub>Se<sub>3</sub> barrier layers. We demonstrate that such Fe<i><sub>m</sub></i>GeTe<sub>2</sub>/In<sub>2</sub>Se<sub>3</sub>/Fe<i><sub>n</sub></i>GeTe<sub>2</sub> (<i>m</i>, <i>n</i> = 3, 4, 5; <i>m</i> ≠ <i>n</i>) MFTJs exhibit multiple nonvolatile resistance states associated with different polarization orientation of the ferroelectric In<sub>2</sub>Se<sub>3</sub> layer and magnetization alignment of the two ferromagnetic Fe<i><sub>n</sub></i>GeTe<sub>2</sub> layers. We find a remarkably low RA product (less than 1 Ω·μm<sup>2</sup>) which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for nonvolatile memory applications.