Superfast Growth Dynamics of High-Quality Silicon Nanowires on Polymer Films via Self-Selected Laser-Droplet-Heating.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33350839.
- Also identified by DOI 10.1021/acs.nanolett.0c04058.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Growing high quality silicon nanowires (SiNWs) at elevated temperature on cooler polymer films seems to be contradictive but highly desirable for building high performance flexible and wearable electronics. In this work, we demonstrate a superfast (<i>v</i><sub>nw</sub> > 3.5 μm·s<sup>-1</sup>) growth of high quality SiNWs on polymer/glass substrates, powered by self-selected laser at 808 nm heating of indium catalyst droplets that absorb amorphous Si layer to produce SiNWs. Because of the tiny heat capacity of the nanodroplets, the SiNW growth can be quickly heated up and frozen via rapid laser ON/OFF switching, enabling a deterministic diameter modulation in the ultralong SiNWs. Finally, prototype field effect transistors are also fabricated upon the laser-droplet-heating grown SiNWs with a high <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of >10<sup>4</sup> and reasonable subthreshold swing of 386 mV·dec<sup>-1</sup>, opening a generic new route to integrate high-quality NW channels directly upon large area and lightweight polymer substrates for developing high-performance flexible electronics.