High Current Density in Monolayer MoS<sub>2</sub> Doped by AlO<sub><i>x</i></sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 33405894.
- Also identified by DOI 10.1021/acsnano.0c09078.
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Abstract
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low-temperature (<200 °C) substoichiometric AlO<sub><i>x</i></sub> provides a stable <i>n</i>-doping layer for monolayer MoS<sub>2</sub>, compatible with circuit integration. This approach achieves carrier densities >2 × 10<sup>13</sup> cm<sup>-2</sup>, sheet resistance as low as ∼7 kΩ/□, and good contact resistance ∼480 Ω·μm in transistors from monolayer MoS<sub>2</sub> grown by chemical vapor deposition. We also reach record current density of nearly 700 μA/μm (>110 MA/cm<sup>2</sup>) along this three-atom-thick semiconductor while preserving transistor on/off current ratio >10<sup>6</sup>. The maximum current is ultimately limited by self-heating (SH) and could exceed 1 mA/μm with better device heat sinking. With their 0.1 nA/μm off-current, such doped MoS<sub>2</sub> devices approach several low-power transistor metrics required by the international technology roadmap.