Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties.
basic_science · Level V
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- Record sourced from PubMed, PMID 33496575.
- Also identified by DOI 10.1021/acsnano.0c06791.
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Abstract
Ultrathin transparent conductive oxides (TCOs) are emerging candidates for next-generation transparent electronics. Indium oxide (In<sub>2</sub>O<sub>3</sub>) incorporated with post-transition-metal ions (<i>e.g.</i>, Sn) has been widely studied due to their excellent optical transparency and electrical conductivity. However, their electron transport properties are deteriorated at the ultrathin two-dimensional (2D) morphology compared to that of intrinsic In<sub>2</sub>O<sub>3</sub>. Here, we explore the domain of transition-metal dopants in ultrathin In<sub>2</sub>O<sub>3</sub> with the thicknesses down to the single-unit-cell limit, which is realized in a large area using a low-temperature liquid metal printing technique. Zn dopant is selected as a representative to incorporate into the In<sub>2</sub>O<sub>3</sub> rhombohedral crystal framework, which results in the gradual transition of the host to quasimetallic. While the optical transmittance is maintained above 98%, an electron field-effect mobility of up to 87 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and a considerable sub-kΩ<sup>-1</sup> cm<sup>-1</sup> ranged electrical conductivity are achieved when the Zn doping level is optimized, which are in a combination significantly improved compared to those of reported ultrathin TCOs. This work presents various opportunities for developing high-performance flexible transparent electronics based on emerging ultrathin TCO candidates.