Benchmarking monolayer MoS<sub>2</sub> and WS<sub>2</sub> field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33514710.
- Also identified by DOI 10.1038/s41467-020-20732-w and PMC identifier 7846590.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS<sub>2</sub> and WS<sub>2</sub> films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS<sub>2</sub> FETs and 160 WS<sub>2</sub> FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm<sup>2</sup> chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> in WS<sub>2</sub> FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.