Face-to-Face Growth of Wafer-Scale 2D Semiconducting MOF Films on Dielectric Substrates.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33599039.
- Also identified by DOI 10.1002/adma.202007741.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The preparation of large-area 2D conductive metal-organic framework (MOF) films remains highly desirable but challenging. Here, inspired by the capillary phenomenon, a face-to-face confinement growth method to grow conductive 2D Cu<sub>2</sub> (TCPP) (TCPP = meso-tetra(4-carboxyphenyl)porphine) MOF films on dielectric substrates is developed. Trace amounts of solutions containing low-concentration Cu<sup>2+</sup> and TCPP are pumped cyclically into a micropore interface to produce this growth. The crystal structures are confirmed with various characterization techniques, which include high-resolution atomic force microscopy and cryogenic transmission electron microscopy (Cryo-TEM). The Cu<sub>2</sub> (TCPP) MOF film exhibit an electrical conductivity of ≈0.007 S cm<sup>-1</sup> , which is approximately four orders of magnitude higher than other carboxylic-acid-based MOF materials (10<sup>-6</sup> S cm<sup>-1</sup> ). Other wafer-scale conductive MOF films such as M<sub>3</sub> (HHTP)<sub>2</sub> (M = Cu, Co, and Ni; HHTP = 2,3,6,7,10,11-triphenylenehexol) can be produced utilizing this strategy and suggests this method has widescale applicability potential.