Ultrafast Triggering of Insulator-Metal Transition in Two-Dimensional VSe<sub>2</sub>.

Biswas, Deepnarayan; Jones, Alfred J H; Majchrzak, Paulina; Choi, Byoung Ki; Lee, Tsung-Han; Volckaert, Klara; Feng, Jiagui; Marković, Igor et al. · Nano Lett · 2021

basic_science · Level V

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Abstract

The transition-metal dichalcogenide VSe<sub>2</sub> exhibits an increased charge density wave transition temperature and an emerging insulating phase when thinned to a single layer. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these phases in single-layer VSe<sub>2</sub> using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap, which we disentangle from the ensuing hot carrier dynamics by fitting a model spectral function to the time-dependent photoemission intensity. This procedure leads to an estimated time scale of 480 fs for the closure of the gap, which suggests that the phase transition in single-layer VSe<sub>2</sub> is driven by electron-lattice interactions rather than by Mott-like electronic effects. The ultrafast optical switching of these interactions in SL VSe<sub>2</sub> demonstrates the potential for controlling phase transitions in 2D materials with light.