Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33606545.
- Also identified by DOI 10.1021/acs.nanolett.0c04592.
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Abstract
Topological materials that possess spin-momentum locked surface states provide an ideal platform to manipulate the quantum spin states by electrical means. However, an antisymmetric magnetoresistance (MR) superimposed on the spin-polarized transport signals is usually observed in the spin potentiometric measurements of topological materials, rendering more power loss and reduced signal-to-noise ratio. Here we reveal the mechanism of surface-bulk interaction for the observed antisymmetric linear MR in the spin transport of Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> nanoplates. The antisymmetric linear MR can be eliminated through sample surface modifications. As a consequence, clean signals of charge current induced spin-polarized transport are observed, robust up to room temperature. The purification of spin signals can be attributed to the isolation of surface and bulk transport channels via forming a charge depletion layer with surface modifications. This surface engineering strategy should be valuable for high-performance spintronic devices on topological materials.