All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXene Contacts.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33635642.
- Also identified by DOI 10.1021/acsnano.0c10471.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Fully solution-processed, large-area, electrical double-layer transistors (EDLTs) are presented by employing lead sulfide (PbS) colloidal quantum dots (CQDs) as active channels and Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXene as electrical contacts (including gate, source, and drain). The MXene contacts are successfully patterned by standard photolithography and plasma-etch techniques and integrated with CQD films. The large surface area of CQD film channels is effectively gated by ionic gel, resulting in high performance EDLT devices. A large electron saturation mobility of 3.32 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and current modulation of 1.87 × 10<sup>4</sup> operating at low driving gate voltage range of 1.25 V with negligible hysteresis are achieved. The relatively low work function of Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXene (4.42 eV) compared to vacuum-evaporated noble metals such as Au and Pt makes them a suitable contact material for <i>n</i>-type transport in iodide-capped PbS CQD films with a LUMO level of ∼4.14 eV. Moreover, we demonstrate that the negative surface charges of MXene enhance the accumulation of cations at lower gate bias, achieving a threshold voltage as low as 0.36 V. The current results suggest a promising potential of MXene electrical contacts by exploiting their negative surface charges.