Asymmetric Metal/α-In<sub>2</sub>Se<sub>3</sub>/Si Crossbar Ferroelectric Semiconductor Junction.
basic_science · Level V
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- Record sourced from PubMed, PMID 33651607.
- Also identified by DOI 10.1021/acsnano.1c00968.
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Abstract
A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In<sub>2</sub>Se<sub>3</sub>/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-In<sub>2</sub>Se<sub>3</sub> c-FSJ is achieved with a high on/off ratio > 10<sup>4</sup> at room temperature, on/off ratio > 10<sup>3</sup> at an elevated temperature of 140 °C, retention > 10<sup>4</sup> s, and endurance > 10<sup>6</sup> cycles. The on/off ratio of the α-In<sub>2</sub>Se<sub>3</sub> asymmetric FSJs can be further enhanced to >10<sup>8</sup> by introducing a metal/α-In<sub>2</sub>Se<sub>3</sub>/insulator/metal structure.