Contact-electrification-activated artificial afferents at femtojoule energy.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33707420.
- Also identified by DOI 10.1038/s41467-021-21890-1 and PMC identifier 7952391.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Low power electronics endowed with artificial intelligence and biological afferent characters are beneficial to neuromorphic sensory network. Highly distributed synaptic sensory neurons are more readily driven by portable, distributed, and ubiquitous power sources. Here, we report a contact-electrification-activated artificial afferent at femtojoule energy. Upon the contact-electrification effect, the induced triboelectric signals activate the ion-gel-gated MoS<sub>2</sub> postsynaptic transistor, endowing the artificial afferent with the adaptive capacity to carry out spatiotemporal recognition/sensation on external stimuli (e.g., displacements, pressures and touch patterns). The decay time of the synaptic device is in the range of sensory memory stage. The energy dissipation of the artificial afferents is significantly reduced to 11.9 fJ per spike. Furthermore, the artificial afferents are demonstrated to be capable of recognizing the spatiotemporal information of touch patterns. This work is of great significance for the construction of next-generation neuromorphic sensory network, self-powered biomimetic electronics and intelligent interactive equipment.