Flexoelectric Thin-Film Photodetectors.
basic_science · Level V
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- Record sourced from PubMed, PMID 33759536.
- Also identified by DOI 10.1021/acs.nanolett.1c00055.
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Abstract
The flexoelectric effect, which manifests itself as a strain-gradient-induced electrical polarization, has triggered great interest due to its ubiquitous existence in crystalline materials without the limitation of lattice symmetry. Here, we propose a flexoelectric photodetector based on a thin-film heterostructure. This prototypical device is demonstrated by epitaxial LaFeO<sub>3</sub> thin films grown on LaAlO<sub>3</sub> substrates. A giant strain gradient of the order of 10<sup>6</sup>/m is achieved in LaFeO<sub>3</sub> thin films, giving rise to an obvious flexoelectric polarization and generating a significant photovoltaic effect in the LaFeO<sub>3</sub>-based heterostructures with nanosecond response under light illumination. This work not only demonstrates a novel self-powered photodetector different from the traditional interface-type structures, such as the p-n and Schottky junctions but also opens an avenue to design practical flexoelectric devices for nanoelectronics applications.