Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 33764052.
- Also identified by DOI 10.1021/acsnano.1c00596.
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Abstract
Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report <i>in situ</i> chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS<sub>2</sub>) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS<sub>2</sub>. Artificial synaptic transistors were fabricated using the heavily doped MoS<sub>2</sub> as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.