Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 33833124.
- Also identified by DOI 10.1126/science.abf5825.
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Abstract
The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe<sub>2</sub>) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe<sub>2</sub> 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe<sub>2</sub> single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.