High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoO<sub><i>x</i></sub> Doping and Passivation.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 33852295.
- Also identified by DOI 10.1021/acs.nanolett.1c00015.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Layered semiconducting transition metal dichalcogenides (TMDs) are promising materials for high-specific-power photovoltaics due to their excellent optoelectronic properties. However, in practice, contacts to TMDs have poor charge carrier selectivity, while imperfect surfaces cause recombination, leading to a low open-circuit voltage (<i>V</i><sub>OC</sub>) and therefore limited power conversion efficiency (PCE) in TMD photovoltaics. Here, we simultaneously address these fundamental issues with a simple MoO<sub><i>x</i></sub> (<i>x</i> ≈ 3) surface charge-transfer doping and passivation method, applying it to multilayer tungsten disulfide (WS<sub>2</sub>) Schottky-junction solar cells with initially near-zero <i>V</i><sub>OC</sub>. Doping and passivation turn these into lateral p-n junction photovoltaic cells with a record <i>V</i><sub>OC</sub> of 681 mV under AM 1.5G illumination, the highest among all p-n junction TMD solar cells with a practical design. The enhanced <i>V</i><sub>OC</sub> also leads to record PCE in ultrathin (<90 nm) WS<sub>2</sub> photovoltaics. This easily scalable doping and passivation scheme is expected to enable further advances in TMD electronics and optoelectronics.